Renesas Electronics America Inc H5N3007FL-M0-E#T2

H5N3007FL-M0-E-T2 Renesas Electronics America Inc H5N3007FL-M0-E#T2
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
160mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
RoHS Status:
Not applicable
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2180 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FL
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is H5N3007FL-M0-E#T2. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 160mohm @ 7.5a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The product is not applicable. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in bulk package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 35w (tc). The product's input capacitance at maximum includes 2180 pf @ 25 v. The product is available in through hole configuration. to-220fl is the supplier device package value. The continuous current drain at 25°C is 15a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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