Fairchild Semiconductor FQPF9N50C

FQPF9N50C Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
800mOhm @ 4.5A, 10V
title:
FQPF9N50C
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
44W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1030 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQPF9N50C. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 800mohm @ 4.5a, 10v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 44w (tc). The product's input capacitance at maximum includes 1030 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 35 nc @ 10 v. to-220-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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