NXP USA Inc. BUK6215-75C,118

BUK6215-75C-118 NXP USA Inc. BUK6215-75C,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
61.8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
Rds On (Max) @ Id, Vgs:
15mOhm @ 15A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
57A (Ta)
Power Dissipation (Max):
128W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by NXP USA Inc.. The manufacturer part number is BUK6215-75C,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 61.8 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach affected. It has a maximum Rds On and voltage of 15mohm @ 15a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3900 pf @ 25 v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 57a (ta). The product carries maximum power dissipation 128w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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