Fairchild Semiconductor SSR1N60BTM-WS

SSR1N60BTM-WS Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
12Ohm @ 450mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
7.7 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Power Dissipation (Max):
2.5W (Ta), 28W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
215 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
900mA (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is SSR1N60BTM-WS. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 12ohm @ 450ma, 10v. The maximum gate charge and given voltages include 7.7 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 2.5w (ta), 28w (tc). The product's input capacitance at maximum includes 215 pf @ 25 v. The product is available in surface mount configuration. to-252 (dpak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 900ma (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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