Fairchild Semiconductor RFD4N06LSM9A

RFD4N06LSM9A Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
600mOhm @ 1A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±10V
Power Dissipation (Max):
30W (Tc)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is RFD4N06LSM9A. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 8 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 600mohm @ 1a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±10v. The product carries maximum power dissipation 30w (tc). The product is available in surface mount configuration. to-252 (dpak) is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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