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This is manufactured by Harris Corporation. The manufacturer part number is RFD3055LESM9A. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 11.3 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 107mohm @ 8a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±16v. The product carries maximum power dissipation 38w (tc). The product's input capacitance at maximum includes 350 pf @ 25 v. The product is available in surface mount configuration. to-252, (d-pak) is the supplier device package value. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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