NXP USA Inc. PMZB420UN,315

PMZB420UN-315 NXP USA Inc. PMZB420UN,315
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-101, SOT-883
Rds On (Max) @ Id, Vgs:
490mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
0.98 nC @ 4.5 V
Vgs(th) (Max) @ Id:
950mV @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±8V
Power Dissipation (Max):
360mW (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
65 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
900mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMZB420UN,315. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-101, sot-883. It has a maximum Rds On and voltage of 490mohm @ 200ma, 4.5v. The maximum gate charge and given voltages include 0.98 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 950mv @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 360mw (ta), 2.7w (tc). The product's input capacitance at maximum includes 65 pf @ 25 v. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 900ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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