NXP USA Inc. PMN50UPE,115

PMN50UPE-115 NXP USA Inc. PMN50UPE,115
PMN50UPE,115
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-74, SOT-457
Gate Charge (Qg) (Max) @ Vgs:
15.7 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
66mOhm @ 3.6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
510mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
24 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMN50UPE,115. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-74, sot-457. The maximum gate charge and given voltages include 15.7 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 66mohm @ 3.6a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 510mw (ta). The product's input capacitance at maximum includes 24 pf @ 10 v. The product is available in surface mount configuration. 6-tsop is the supplier device package value. The continuous current drain at 25°C is 3.6a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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