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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is NP82N04NDG-S18-AY. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 full pack, i²pak. The maximum gate charge and given voltages include 150 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 4.2mohm @ 41a, 10v. It carries FET type n-channel. It is shipped in tube package . The product has a 40 v drain to source voltage. The product carries maximum power dissipation 1.8w (ta), 143w (tc). The product's input capacitance at maximum includes 9 pf @ 25 v. The product is available in through hole configuration. to-262-3 is the supplier device package value. The continuous current drain at 25°C is 82a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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