Fairchild Semiconductor NDS352P

NDS352P Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
350mOhm @ 1A, 10V
edacadModel:
NDS352P Models
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 5 V
RoHS Status:
ROHS3 Compliant
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/11511773
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
125 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
850mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is NDS352P. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 350mohm @ 1a, 10v. The maximum gate charge and given voltages include 4 nc @ 5 v. The product is rohs3 compliant. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 125 pf @ 10 v. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 850ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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