Fairchild Semiconductor IRLR130ATM

IRLR130ATM Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
120mOhm @ 6.5A, 5V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.5W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
755 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is IRLR130ATM. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 120mohm @ 6.5a, 5v. The maximum gate charge and given voltages include 24 nc @ 5 v. The typical Vgs (th) (max) of the product is 2v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.5w (ta), 46w (tc). The product's input capacitance at maximum includes 755 pf @ 25 v. The product is available in surface mount configuration. to-252 (dpak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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