Fairchild Semiconductor HUF75617D3

HUF75617D3 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
90mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 20 V
Vgs(th) (Max) @ Id:
4V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
64W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
570 pF @ 25 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
IPAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is HUF75617D3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 90mohm @ 16a, 10v. The maximum gate charge and given voltages include 39 nc @ 20 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 64w (tc). The product's input capacitance at maximum includes 570 pf @ 25 v. The product is available in through hole configuration. The product ultrafet™, is a highly preferred choice for users. ipak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. We ship HUF75617D3 Internationally to many countries around the world.