Fairchild Semiconductor FQP7N80

FQP7N80 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
52 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
edacadModel:
FQP7N80 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/11558393
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Power Dissipation (Max):
167W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1850 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQP7N80. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 1.5ohm @ 3.3a, 10v. The maximum gate charge and given voltages include 52 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 167w (tc). The product's input capacitance at maximum includes 1850 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6.6a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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