Fairchild Semiconductor FQP19N10L

FQP19N10L Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
100mOhm @ 9.5A, 10V
edacadModel:
FQP19N10L Models
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 5 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/11510386
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQP19N10L. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 100mohm @ 9.5a, 10v. The maximum gate charge and given voltages include 18 nc @ 5 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 75w (tc). The product's input capacitance at maximum includes 870 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 19a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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