Fairchild Semiconductor FDS6162N3

FDS6162N3 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 21A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
5521 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SO
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
21A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDS6162N3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 4.5mohm @ 21a, 4.5v. The maximum gate charge and given voltages include 73 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 3w (ta). The product's input capacitance at maximum includes 5521 pf @ 10 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 21a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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