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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDFMA2P859T. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. The maximum gate charge and given voltages include 6 nc @ 4.5 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 120mohm @ 3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 1.4w (ta). The product's input capacitance at maximum includes 435 pf @ 10 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. microfet 2x2 thin is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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