onsemi CPH6311-TL-E

CPH6311-TL-E onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
RoHS Status:
Not applicable
Rds On (Max) @ Id, Vgs:
42mOhm @ 3A, 4.5V
FET Type:
P-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Input Capacitance (Ciss) (Max) @ Vds:
1230 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-CPH
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is CPH6311-TL-E. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The maximum gate charge and given voltages include 31 nc @ 10 v. The product is not applicable. It has a maximum Rds On and voltage of 42mohm @ 3a, 4.5v. It carries FET type p-channel. It is shipped in bulk package . The product has a 20 v drain to source voltage. The product's input capacitance at maximum includes 1230 pf @ 10 v. The product is available in surface mount configuration. 6-cph is the supplier device package value. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 1.6w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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