Infineon Technologies IRFS59N10D

IRFS59N10D Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
25mOhm @ 35.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
114 nC @ 10 V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2450 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
59A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IRFS59N10D. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 25mohm @ 35.4a, 10v. The maximum gate charge and given voltages include 114 nc @ 10 v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in bulk package . The product has a 100 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2450 pf @ 25 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 59a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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IRFB59N10D, IRFS(L)59N10D(Datasheets)
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IR Part Numbering System(Other Related Documents)

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