Infineon Technologies IPP085N06LGAKSA1

IPP085N06LGAKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 125µA
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
104 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 80A. 10V
FET Type:
N-Channel
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3500 pF @ 30 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPP085N06LGAKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 125µa. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 104 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 8.5mohm @ 80a. 10v. It carries FET type n-channel. It is shipped in tube package . The product has a 60 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3500 pf @ 30 v. The product is available in through hole configuration. The product optimos™, is a highly preferred choice for users. pg-to220-3-1 is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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IPB,IPP085N06L G(Datasheets)
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Part Number Guide(Other Related Documents)

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