Fairchild Semiconductor RFP50N06_F102

RFP50N06_F102 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 20 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
131W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2020 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is RFP50N06_F102. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 150 nc @ 20 v. It has a maximum Rds On and voltage of 22mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 131w (tc). The product's input capacitance at maximum includes 2020 pf @ 25 v. The product is available in through hole configuration. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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