NXP USA Inc. PSMN8R040PS127

PSMN8R040PS127 NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0075
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
86W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1262 pF @ 12 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
77A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN8R040PS127. It is assigned with possible HTSUS value of 8541.29.0075. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 7.6mohm @ 25a, 10v. The maximum gate charge and given voltages include 21 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 86w (ta). The product's input capacitance at maximum includes 1262 pf @ 12 v. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 77a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PSMN8R0-40PS,127 Datasheet(Datasheets)

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