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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN5R3-25MLDX. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1210, 8-lfpak33 (5-lead). The maximum gate charge and given voltages include 12.7 nc @ 10 v. It has a maximum Rds On and voltage of 5.9mohm @ 15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 51w (tc). The product's input capacitance at maximum includes 858 pf @ 12 v. The product is available in surface mount configuration. lfpak33 is the supplier device package value. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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