NXP USA Inc. PSMN2R8-40BS,118

PSMN2R8-40BS-118 NXP USA Inc. PSMN2R8-40BS,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
71 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
211W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4491 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN2R8-40BS,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 2.9mohm @ 10a, 10v. The maximum gate charge and given voltages include 71 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 211w (tc). The product's input capacitance at maximum includes 4491 pf @ 20 v. The product is available in surface mount configuration. d2pak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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