NXP USA Inc. PSMN2R6-60PSQ127

PSMN2R6-60PSQ127 NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0075
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
326W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
7629 pF @ 25 V
Mounting Type:
Through Hole
Series:
TrenchMOS™
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
150A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN2R6-60PSQ127. It is assigned with possible HTSUS value of 8541.29.0075. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 2.6mohm @ 25a, 10v. The maximum gate charge and given voltages include 140 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 326w (ta). The product's input capacitance at maximum includes 7629 pf @ 25 v. The product is available in through hole configuration. The product trenchmos™, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 150a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PSMN2R6-60PS(Datasheets)

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