NXP Semiconductors PSMN2R0-30PL,127

NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
117 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
211W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6810 pF @ 12 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN2R0
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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN2R0-30PL,127. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 117 nc @ 10 v. It has a maximum Rds On and voltage of 2.1mohm @ 15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 211w (tc). The product's input capacitance at maximum includes 6810 pf @ 12 v. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn2r0, a base product number of the product.

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PSMN2R0-30PL,127 Datasheet(Datasheets)

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