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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN009-100P,127. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 8.8mohm @ 25a, 10v. The maximum gate charge and given voltages include 156 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 230w (tc). The product's input capacitance at maximum includes 8250 pf @ 25 v. The product is available in through hole configuration. The product trenchmos™, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn009, a base product number of the product.
For more information please check the datasheets.
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