NXP Semiconductors PMV33UPE,215

PMV33UPE-215 NXP Semiconductors PMV33UPE,215
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
22.1 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
36mOhm @ 3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
490mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1820 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMV33UPE,215. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 22.1 nc @ 4.5 v. It has a maximum Rds On and voltage of 36mohm @ 3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 490mw (ta). The product's input capacitance at maximum includes 1820 pf @ 10 v. The product is available in surface mount configuration. sot-23 is the supplier device package value. The continuous current drain at 25°C is 4.4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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