NXP Semiconductors PMPB43XPE,115

PMPB43XPE-115 NXP Semiconductors PMPB43XPE,115
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
23.4 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
48mOhm @ 5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1550 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN2020MD-6
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMPB43
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMPB43XPE,115. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. The maximum gate charge and given voltages include 23.4 nc @ 4.5 v. It has a maximum Rds On and voltage of 48mohm @ 5a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 1.7w (ta), 12.5w (tc). The product's input capacitance at maximum includes 1550 pf @ 10 v. The product is available in surface mount configuration. dfn2020md-6 is the supplier device package value. The continuous current drain at 25°C is 5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmpb43, a base product number of the product.

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