NXP USA Inc. PMPB13XNE,115

PMPB13XNE-115 NXP USA Inc. PMPB13XNE,115
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 8A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2195 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010B-6
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMPB13
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMPB13XNE,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfdfn exposed pad. The maximum gate charge and given voltages include 36 nc @ 4.5 v. It has a maximum Rds On and voltage of 16mohm @ 8a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 1.7w (ta), 12.5w (tc). The product's input capacitance at maximum includes 2195 pf @ 15 v. The product is available in surface mount configuration. dfn1010b-6 is the supplier device package value. The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmpb13, a base product number of the product. The product is designated with the ear99 code number.

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