International Rectifier IRL2203NSPBF

IRL2203NSPBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
7mOhm @ 60A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±16V
Power Dissipation (Max):
3.8W (Ta), 180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3290 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
116A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRL2203NSPBF. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 60 nc @ 4.5 v. It has a maximum Rds On and voltage of 7mohm @ 60a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±16v. The product carries maximum power dissipation 3.8w (ta), 180w (tc). The product's input capacitance at maximum includes 3290 pf @ 25 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 116a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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