International Rectifier IRFSL7530PBF

IRFSL7530PBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.7V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
411 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
13703 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®, StrongIRFET™
Supplier Device Package:
TO-262
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRFSL7530PBF. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.7v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 411 nc @ 10 v. It has a maximum Rds On and voltage of 2mohm @ 100a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 375w (tc). The product's input capacitance at maximum includes 13703 pf @ 25 v. The product is available in surface mount configuration. The product hexfet®, strongirfet™, is a highly preferred choice for users. to-262 is the supplier device package value. The continuous current drain at 25°C is 195a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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