International Rectifier IRFSL3207ZPBF

IRFSL3207ZPBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 150µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6920 pF @ 50 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-262
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRFSL3207ZPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 150µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 170 nc @ 10 v. It has a maximum Rds On and voltage of 4.1mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 6920 pf @ 50 v. The product is available in through hole configuration. The product hexfet®, is a highly preferred choice for users. to-262 is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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