Fairchild Semiconductor IRFS610BFP001

IRFS610BFP001 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.65A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Power Dissipation (Max):
22W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
225 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F
Current - Continuous Drain (Id) @ 25°C:
3.3A (Tj)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is IRFS610BFP001. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 9.3 nc @ 10 v. It has a maximum Rds On and voltage of 1.5ohm @ 1.65a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 22w (tc). The product's input capacitance at maximum includes 225 pf @ 25 v. The product is available in through hole configuration. to-220f is the supplier device package value. The continuous current drain at 25°C is 3.3a (tj). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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