Fairchild Semiconductor IRFP254BFP001

IRFP254BFP001 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
123 nC @ 10 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 12.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Power Dissipation (Max):
221W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3400 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is IRFP254BFP001. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 123 nc @ 10 v. It has a maximum Rds On and voltage of 140mohm @ 12.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 221w (tc). The product's input capacitance at maximum includes 3400 pf @ 25 v. The product is available in through hole configuration. to-3p is the supplier device package value. The continuous current drain at 25°C is 25a (tc). This product use mosfet (metal oxide) technology.

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IRFP254B Datasheet(Datasheets)

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