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Harris Corporation IRFF9130

IRFF9130 Harris Corporation
Harris Corporation

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-205AF Metal Can
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
300mOhm @ 3A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
500 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-205AF (TO-39)
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Harris Corporation. The manufacturer part number is IRFF9130. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-205af metal can. The maximum gate charge and given voltages include 45 nc @ 10 v. It has a maximum Rds On and voltage of 300mohm @ 3a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 25w (tc). The product's input capacitance at maximum includes 500 pf @ 25 v. The product is available in through hole configuration. to-205af (to-39) is the supplier device package value. The continuous current drain at 25°C is 6.5a (tc). This product use mosfet (metal oxide) technology.

pdf icon
IRFF9130,31,32,33 Datasheet(Datasheets)

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Yes. We ship IRFF9130 Internationally to many countries around the world.