International Rectifier IRFB33N15DPBF

IRFB33N15DPBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Rds On (Max) @ Id, Vgs:
56mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±30V
Power Dissipation (Max):
3.8W (Ta), 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2020 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRFB33N15DPBF. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 90 nc @ 10 v. It has a maximum Rds On and voltage of 56mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 3.8w (ta), 170w (tc). The product's input capacitance at maximum includes 2020 pf @ 25 v. The product is available in through hole configuration. The product hexfet®, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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