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The IRF6797MTRPBF supplied by International Rectifier is a high-performance power MOSFET driver with exceptional efficiency and reliability. With its compact size and advanced features like built-in protection circuits, it provides optimal control and protection for power switching applications.
The International Rectifier IRF6797MTRPBF is a powerful N-channel MOSFET designed for high-performance applications. With a voltage rating of 25V and a current capability of 36A continuous and 210A pulsed, this MOSFET is ideal for demanding electronic circuits that require efficient power switching and amplification. It is a versatile and powerful device with high current and voltage ratings, excellent power efficiency, and fast switching speed. Its DirectFET package and enhanced thermal characteristics provide reliable performance in demanding applications.
Due to its high current and voltage ratings, the IRF6797MTRPBF is well-suited for applications requiring robust power switching capabilities. It can be utilised in motor control circuits, DC-DC converters, power supplies, and other high-current applications. Its efficient performance and fast switching speed make it a valuable component in power electronics designs.
The IRF6797MTRPBF MOSFET operates at a maximum voltage of 25V, making it suitable for a wide range of low-voltage applications. It can handle continuous currents of up to 36A, enabling it to handle substantial power loads. Additionally, it has an impressive pulsed current rating of 210A, allowing it to withstand high current surges for short durations.
This MOSFET is designed to provide exceptional power efficiency and switching speed performance. Its low on-resistance ensures minimal power loss and efficient power conversion. With a fast-switching time, it can handle rapid transitions between the on and off states, making it suitable for applications that require quick response times.
The IRF6797MTRPBF comes in a DirectFET package, a surface-mount power MOSFET package with enhanced thermal and electrical characteristics. This package design allows for better heat dissipation, lessening the risk of overheating and improving overall reliability. The DirectFET package also offers a compact footprint, saving valuable space on the circuit board.
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