International Rectifier IRF3205STRLPBF

IRF3205STRLPBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
146 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 62A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3247 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by International Rectifier. The manufacturer part number is IRF3205STRLPBF. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 146 nc @ 10 v. It has a maximum Rds On and voltage of 8mohm @ 62a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 200w (tc). The product's input capacitance at maximum includes 3247 pf @ 25 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology.

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Yes. We ship IRF3205STRLPBF Internationally to many countries around the world.