Infineon Technologies IPW65R190C7

Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 290µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
190mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Power Dissipation (Max):
72W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1150 pF @ 400 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
PG-TO247-3
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IPW65R190C7. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 290µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 190mohm @ 5.7a, 10v. The maximum gate charge and given voltages include 23 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 72w (tc). The product's input capacitance at maximum includes 1150 pf @ 400 v. The product is available in through hole configuration. The product coolmos™, is a highly preferred choice for users. pg-to247-3 is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology.

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IPW65R190C7 Datasheet(Datasheets)

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