Infineon Technologies IPW65R095C7

IPW65R095C7 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 590µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
95mOhm @ 11.8A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2140 pF @ 400 V
Mounting Type:
Through Hole
Series:
CoolMOS™ C7
Supplier Device Package:
PG-TO247
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Power Dissipation (Max):
128W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPW65R095C7. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 590µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 45 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 95mohm @ 11.8a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2140 pf @ 400 v. The product is available in through hole configuration. The product coolmos™ c7, is a highly preferred choice for users. pg-to247 is the supplier device package value. The continuous current drain at 25°C is 24a (tc). The product carries maximum power dissipation 128w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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