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This is manufactured by Infineon Technologies. The manufacturer part number is IPP114N12N3G. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 83µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 65 nc @ 10 v. It has a maximum Rds On and voltage of 11.4mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 120 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 136w (tc). The product's input capacitance at maximum includes 4310 pf @ 60 v. The product is available in through hole configuration. The product optimos™ 3, is a highly preferred choice for users. pg-to220-3-1 is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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