Infineon Technologies IPN65R1K5CE

IPN65R1K5CE Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
3.5V @ 100µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-261-3
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Power Dissipation (Max):
5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
225 pF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ CE
Supplier Device Package:
PG-SOT223
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IPN65R1K5CE. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 3.5v @ 100µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-3. It has a maximum Rds On and voltage of 1.5ohm @ 1a, 10v. The maximum gate charge and given voltages include 10.5 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 5w (tc). The product's input capacitance at maximum includes 225 pf @ 100 v. The product is available in surface mount configuration. The product coolmos™ ce, is a highly preferred choice for users. pg-sot223 is the supplier device package value. The continuous current drain at 25°C is 5.2a (tc). This product use mosfet (metal oxide) technology.

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Yes. We ship IPN65R1K5CE Internationally to many countries around the world.