Infineon Technologies IPN50R950CE

Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 100µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-261-3
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
950mOhm @ 1.2A, 13V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
13V
Package:
Bulk
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Power Dissipation (Max):
5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
231 pF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ CE
Supplier Device Package:
PG-SOT223-3-1
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPN50R950CE. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 100µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-3. The maximum gate charge and given voltages include 10.5 nc @ 10 v. It has a maximum Rds On and voltage of 950mohm @ 1.2a, 13v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 13v. It is shipped in bulk package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 5w (tc). The product's input capacitance at maximum includes 231 pf @ 100 v. The product is available in surface mount configuration. The product coolmos™ ce, is a highly preferred choice for users. pg-sot223-3-1 is the supplier device package value. The continuous current drain at 25°C is 6.6a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. We ship IPN50R950CE Internationally to many countries around the world.