Infineon Technologies IPI072N10N3G

IPI072N10N3G Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.5V @ 90µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
7.2mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs:
68 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4910 pF @ 50 V
Mounting Type:
Through Hole
Series:
OptiMOS® 3
Supplier Device Package:
PG-TO262-3-1
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPI072N10N3G. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.5v @ 90µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 7.2mohm @ 80a, 10v. The maximum gate charge and given voltages include 68 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 4910 pf @ 50 v. The product is available in through hole configuration. The product optimos® 3, is a highly preferred choice for users. pg-to262-3-1 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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