Infineon Technologies IPD80R1K4P7

IPD80R1K4P7 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 1.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Power Dissipation (Max):
32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 500 V
Mounting Type:
Surface Mount
Series:
CoolMOS™
Supplier Device Package:
PG-TO252-3-341
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPD80R1K4P7. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 700µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 10 nc @ 10 v. It has a maximum Rds On and voltage of 1.4ohm @ 1.4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 32w (tc). The product's input capacitance at maximum includes 250 pf @ 500 v. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. pg-to252-3-341 is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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