Infineon Technologies IPD78CN10NG

IPD78CN10NG Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 12µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Rds On (Max) @ Id, Vgs:
78mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
716 pF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 2
Supplier Device Package:
PG-TO252-3-313
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPD78CN10NG. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 12µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 11 nc @ 10 v. It has a maximum Rds On and voltage of 78mohm @ 13a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 31w (tc). The product's input capacitance at maximum includes 716 pf @ 50 v. The product is available in surface mount configuration. The product optimos™ 2, is a highly preferred choice for users. pg-to252-3-313 is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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