Infineon Technologies IPD25N06S4L-30ATMA2

IPD25N06S4L-30ATMA2 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 8µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
16.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
30mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Power Dissipation (Max):
29W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1220 pF @ 25 V
Mounting Type:
Surface Mount
Series:
OptiMOS®
Supplier Device Package:
PG-TO252-3-11
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPD25N06S4L-30ATMA2. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 8µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 16.3 nc @ 10 v. It has a maximum Rds On and voltage of 30mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±16v. The product carries maximum power dissipation 29w (tc). The product's input capacitance at maximum includes 1220 pf @ 25 v. The product is available in surface mount configuration. The product optimos®, is a highly preferred choice for users. pg-to252-3-11 is the supplier device package value. The continuous current drain at 25°C is 25a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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