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Infineon Technologies IPB180N03S4L-01

IPB180N03S4L-01 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2.2V @ 140µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Gate Charge (Qg) (Max) @ Vgs:
239 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.05mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±16V
Power Dissipation (Max):
188W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
17600 pF @ 25 V
Mounting Type:
Surface Mount
Series:
CoolMOS™
Supplier Device Package:
PG-TO263-7-3-10
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB180
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPB180N03S4L-01. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 2.2v @ 140µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-7, d²pak (6 leads + tab), to-263cb. The maximum gate charge and given voltages include 239 nc @ 10 v. It has a maximum Rds On and voltage of 1.05mohm @ 100a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±16v. The product carries maximum power dissipation 188w (tc). The product's input capacitance at maximum includes 17600 pf @ 25 v. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. pg-to263-7-3-10 is the supplier device package value. The continuous current drain at 25°C is 180a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipb180, a base product number of the product. The product is designated with the ear99 code number.

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