Fairchild Semiconductor HUF75852G3

HUF75852G3 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
480 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
Rds On (Max) @ Id, Vgs:
16mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Power Dissipation (Max):
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7690 pF @ 25 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-247
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is HUF75852G3. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 480 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach affected. It has a maximum Rds On and voltage of 16mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 500w (tc). The product's input capacitance at maximum includes 7690 pf @ 25 v. The product is available in through hole configuration. The product ultrafet™, is a highly preferred choice for users. to-247 is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. We ship HUF75852G3 Internationally to many countries around the world.