Fairchild Semiconductor HUF75639S3STNL

HUF75639S3STNL Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 20 V
Rds On (Max) @ Id, Vgs:
25mOhm @ 56A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is HUF75639S3STNL. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 130 nc @ 20 v. It has a maximum Rds On and voltage of 25mohm @ 56a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 200w (tc). The product's input capacitance at maximum includes 2000 pf @ 25 v. The product is available in surface mount configuration. The product ultrafet™, is a highly preferred choice for users. d2pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 56a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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